Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation

摘要

Positron lifetime spectra were measured for three Zn doped p-InP samples as a function of temperature. Interaction of Zn dopants and native P vacancies was observed under thermal activation. It is found that the formation of Zn-Vp complex has a correlation with the carrier concentration. The formation mechanism of the complex was tentatively discussed.