AMORPHOUS PHASE FORMATION OF Mo_(1-x)Ge_(x),Mo_(1-x)Si_(x),FILMS AND THEIR SUPERCONDUCTING PROPERTIES

摘要

Mo_(1-x)Ge_(x),Mo_(1-x)Si_(x),films were prepared by getter sputtering onto liquid nitrogen cooled substrates.The amorphous phase formations were Ge>22 at.%,Si>18 at.%respectively.With the increase of Ge,Si content,Tc decreased from 6 to 3K in the amorphous state.The measured results of(dBc2/dT)T_(c),Jc andρ(300K)/ρ(8K)indicated that the four chosen Mo_(1-x)Si_(x)films exhibit fundamental characteristics of amorphous superconductors.