MOCVD Growth of GaAs/Al_(x)Ga_(1-x)As Superlattices and Their Smoothing Effects

摘要

This paper presents metalorganic chemical vapor deposition(MOCVD)growth of GaAs/Al_(x)Ga_(1-x)As superlattices in our laboratory.Superlattice structures are characterized by using cros&-sectional transmission electron microscopy,and the results show that they are in agreement with designed parameters.The superlattice used as buffer layer can smooth out interface tiuctuations.The high mobility of Ga-containing species and the anisotropic growth rate of GaAs on different facets lead to the planarization of the wavy interface;whereas the low mobility of Al-containing species tends to preserve the surface shape.