Dislocation Movement in Nitrogen-Doped Czochralski Silicon

摘要

Dislocation movemnent in N-doped Czochralski silicon(Cz-Si)was surrveyed by four point bend method,Dislocation mnovemnent velocities in.Cz-Si doped with nitrogen,with both nitrogen and antimony,and with only antimony were investigated,The order of measured dislocation movement velocities,at 700°C≤T≤800°C and under resolved stress σ=4.1 kg/mm^(2),was Vsp,O>V_(N,sb,O)>V_(N,O).The experiments showed that nitrogen doping could retard the movement ofdislocations.