InAlAs/InGaAs Quantum Well Infrared Photodetectors with 3-5μm Band Grown by Gas Source Molecular Beam Epitaxy

摘要

The relationship between well width and subband energy as well as response wavelength of the InAlAs/InGaAs multi-quantum well structures have been calculated for the design of the devices by using Kronig-Penney model.By using gas source molecular beam epitaxy grown InAlAs/InGaAs quantum well infrared photodetector(QWIP)materials have been used to fabricate QWIP devices with 3-5μm band.Ⅰ-Ⅴ characteristics and response spectra of the devices have been measured.Results show that the devices have peak response at 4.0μm with full width of half maximum of about 29.5meV.