Computer Simulation for the Formation of the Insulator Layer of Silicon-on-Insulator Devices by N+ and O+ Co-implantation

摘要

A buried sandwiched layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) is formed by N+ and O+ co-implantation in silicon wafers at a constant temperature of 550. C.The microstructure is performed by cross-sectional transmission electron microscopy. To predict the quality of the buried sandwiched layer, we study the computer simulation for the formation of the SIMON (separated by implantation of oxygen and nitrogen) structure. The simulation program for SIMOX (separated by implantation of oxygen) is improved in order to be applied in O+ and N+ co-implantation on the basis of different formation mechanism between SIMOX and SIMNI (separated by implantation of nitrogen) structures. There is a good agreement between experiment and simulation results verifying the theoretical model and presumption in the program.