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Exciton-Phonon Scattering in CdSe/ZnSe Quantum Dots

         

摘要

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well. We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer. The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer, which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.

著录项

  • 来源
    《中国物理快报:英文版 》 |2002年第4期|578-580|共3页
  • 作者单位

    Laboratory of Excited State Process, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021;

    Laboratory of Excited State Process, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021;

    Laboratory of Excited State Process, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021;

    Laboratory of Excited State Process, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学 ;
  • 关键词

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