Electron Field Emission of CNx Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapour Deposition

摘要

CNx thin films were prepared using low pressure plasma enhanced chemical vapour deposition, and then bom-barded by low-energy N+2. The compositions before and after+2 bombardment were compared using x-ray photoelectron spectroscopy. The electron field emission characteristics of CNx thin films before and after N+2bombardment were studied under the pressure of 10-6 Pa. For the samples, the turn-on emission field decreased from 2.5 V/μm to 1.2 V/lμm while the stable current density increased from 0.5 mA/cm2 to a value larger than l mA/crm2 before and after the bombardment. Our results illustrate that the field emission characteristics were improved after the bombardment of N+2 .