首页> 中文期刊> 《中国物理快报:英文版》 >Fabrication of Thermo-Optic Switch in Silicon-on-Insulator

Fabrication of Thermo-Optic Switch in Silicon-on-Insulator

         

摘要

Silicon-on-insulator technology has been used to fabricate 2 × 2 thermo-optic switches. The switch shows crosstalk of-23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 μs and the power consumption is about 420mW. The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

著录项

  • 来源
    《中国物理快报:英文版》 |2003年第12期|2185-2187|共3页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号