首页> 中文期刊> 《中国物理快报:英文版》 >One-Turn Map of Storage Ring with Insertion Devices

One-Turn Map of Storage Ring with Insertion Devices

         

摘要

Considering that the one-turn map can provide a useful and powerful tool to understand the nonlinear dynamics in a designing storage ring dedicated to synchrotron radiation and in a damping ring used as the pre-injector of linear collider, we first expand the Hamiltonian of a charged particle moving along the insertion device (ID)axis to the fourth-order Taylor series, and then construct a second-order symplectic integrator using the Lie map product for the particle passing through one period of the ID. The one-turn map can be obtained by concatenating the Lie map of the whole ID and the rest part of ring.

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