High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source/Drain on Thin Film SOI Substrate

摘要

@@ P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with PtSi Schottky barrier source/drain, high-k gate dielectric and metal gate electrode were fabricated on a thin p-type silicon-on-insulator (SOI) substrateusing a simplified low temperature process. The device works on a fully-depleted accumulation-mode and hasan excellent electrical performance. It reaches Ion/Ioff ratio of about 107, subthreshold swing of 65mV/decade and saturation drain current of Ids= 8.8μA/μm at |Vg - Vth| = |Vd| = 1 V for devices with the channel length 4.0μm and the equivalent oxide thickness 2.0nm. Compared to the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smaller off-state current due to reduction of the PtSi/Si contact area.