Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell

摘要

@@ In situ resistance measurement of Graphitic-C3N4 has been performed under high pressure in a diamond anvil cell. The result reveals that there are changes of electron transport behaviour. As the pressure increases from ambient to 30 GPa, three abnormal resistance changes can be found at room temperature and two are found at 77K. The abnormal resistance dropped at 5 GPa is close to the phase transition pressure from the P6m2 structure to the p structure predicted by Lowther et al. [Phys. Rev. B 59 (1999) 11683] Another abnormal change of resistance at 12GPa is related to the phase transition from g-C3N4 to cubic-C3N4 [Teter and Hemley, Science 271 (1996) 53].