首页> 中文期刊> 《中国物理快报:英文版》 >Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

         

摘要

@@ We have fabricated a top- emitting organic light-emitting device on silicon substrate with high yellow luminance based on 5,6,11,12-tetraphenylnaphthacene sub-monolayer. It consists of a thin layer of highly conductive silver as the semitransparent cathode and surfaced-modified Ag as the anode. The device turns on at 3 V with the luminance of 8.4 cd/m2. The maximum current efficiency is 1.3 cd/A at 6 V and the luminance reaches 14790 cd/m2at 14 V. The performance of the device is excellent in top-emitting organic light-emitting devices according to our knowledge.

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  • 来源
    《中国物理快报:英文版》 |2005年第1期|233-235|共3页
  • 作者单位

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

    Department of Physics, Quanzhou Normal College, Quanzhou 362000;

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

    National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023;

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