Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique

摘要

@@ GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2Os/Mg films under flowing ammonia atmosphere at the temperature of 1000℃ for 15 min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and highresolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200 nm to 600 nm.