首页> 中文期刊> 《中国物理快报:英文版》 >Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing

Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing

         

摘要

@@ We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process.

著录项

  • 来源
    《中国物理快报:英文版》 |2006年第9期|2579-2582|共4页
  • 作者单位

    State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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