首页> 中文期刊> 《中国物理快报:英文版》 >Q-Switched Large-Mode-Area Yb-Doped Fibre Laser Using GaAs as Saturable Absorber

Q-Switched Large-Mode-Area Yb-Doped Fibre Laser Using GaAs as Saturable Absorber

         

摘要

A passive Q-switched large-mode-area Yb-doped fibre laser is demonstrated using a GaAs wafer as the saturable absorber. A high Yb doping concentration double-clad fibre with a core diameter of 30 μm and a numerical aperture of 0.07 is used to increase the laser gain volume, permitting greater energy storage and higher output power than conventional fibres. The maximum average output power is 7.2 W at 1080nm wavelength, with the shortest pulse duration of 580ns and the highest peak power of 161 W when the laser is pumped with a 25 W diode laser operating at 976 nm. The repetition rate increases with the pump power linearly and the highest repetition rate of 77kHz is obtained in the experiment.

著录项

  • 来源
    《中国物理快报:英文版》 |2007年第5期|1264-1266|共3页
  • 作者单位

    College of Information Technology Science, Nankai University, Tianjin 300071;

    College of Information Technology Science, Nankai University, Tianjin 300071;

    College of Information Technology Science, Nankai University, Tianjin 300071;

    College of Information Technology Science, Nankai University, Tianjin 300071;

    College of Information Technology Science, Nankai University, Tianjin 300071;

    College of Information Technology Science, Nankai University, Tianjin 300071;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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