首页> 中文期刊> 《中国物理快报:英文版》 >A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd:YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd:YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

         

摘要

We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5MHz, pulse duration of Sips, power of 2×200 mW.

著录项

  • 来源
    《中国物理快报:英文版》 |2007年第5期|1270-1272|共3页
  • 作者单位

    Institute of Laser and Optoelectronics, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072;

    Institute of Laser and Optoelectronics, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072;

    Institute of Laser and Optoelectronics, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Quantum Electronics, School of Electronics Engineering and Computer Science, Peking University,Beijing 100871;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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