High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm

摘要

Si16Sb84-based line cell phase change random access memory (PCRAM), in which the Si16Sb84 phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography. The lowest current and measured pulse width for RESET operation are 115μA and 18 ns, respectively. The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5 V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 106 cycles with a resistance ratio of above 800 has been achieved.