首页> 中文期刊> 《中国物理快报:英文版》 >Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1 Ti0.9 O2-δ Films Prepared by Sol-Gel Method

Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1 Ti0.9 O2-δ Films Prepared by Sol-Gel Method

         

摘要

The Co-doped TiO,2 films (Co,0.1 Ti,0.9 O,2-δ) are prepared on silicon substrates by sol-gel method and post annealing. The Co,0.1 Ti,0.9 O,2-δ film annealed in air is non-ferromagnetic at room temperature. After further annealed in a vacuum, the room-temperature ferromagnetism (RTFM) is observed. Experimental evidences show that the RTFM in the Co,0.1 Ti,0.9 O,2-δ film may come from the Co-doped TiO,2 matrix and is related to the oxygen vacancies created by vacuum annealing.

著录项

  • 来源
    《中国物理快报:英文版》 |2008年第7期|2638-2641|共4页
  • 作者单位

    Institute of Microelectronics, Peking University, Beijing 100871;

    Institute of Microelectronics, Peking University, Beijing 100871;

    Institute of Microelectronics, Peking University, Beijing 100871;

    Institute of Microelectronics, Peking University, Beijing 100871;

    Institute of Microelectronics, Peking University, Beijing 100871;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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