Synthesis of 100 Wurtzite InN Nanowires and 011 Zinc-Blende InN Nanorods

摘要

One-dimensional wurtzite InN nanowires and zincblende InN nanorods axe prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs.The growth direction of InN nanowires is[100],with wurtzite structure.The stable crystal structure of InN is wurtzite (w-InN),zincblende structure (z-InN) is only reported for 2D InN crystals before.However,in this work,the zincblende InN nanorods[011]are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip,which can be explained by the anisotropy of growth process and the theory of Ehrlich-Schwoebel barrier.