Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

摘要

@@ We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution.The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence(PL)from the Fourier transform infrared spectroscopy and PL measurements.[-SiO3]2- is observed by positron annihilation spectroscopy,and this defect can make the S parameters increase.After 1000℃ annealing,[-SiO3]2- defects still exist in the films.