Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well

摘要

Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the ln0.2Ga0.8As quantum well.