Annealing Effect of Pulsed Laser Deposited Transparent Conductive Ta-Doped Titanium Oxide Films

摘要

Tantalum-doped TiO2 Rilms were deposited on glass at 300℃PG by pulsed laser deposition (PLD). After post-annealing in vacuum (~10-4 Pa) at temperatures ranging from 450℃ to 650℃, these films were crystallized into an anatase TiO2 structure and presented good conductive features. With increasing annealing temperature up to 550℃, the resistivity of the films was measured to be around 8.7 x 10-4 Ω·cm. Such films exhibit high transparency of over 80% in the visible light region. These results indicate that tantalum-doped anatase TiO2 films have a great potential as transparent conducting oxides.%Tantalum-doped TiO2 films were deposited on glass at 300℃ by pulsed laser deposition (PLD).After postannealing in vacuum (～10-4 Pa) at temperatures ranging from 450℃ to 650℃,these films were crystallized into an anatase TiO2 structure and presented good conductive features.With increasing annealing temperature up to 550℃,the resistivity of the films was measured to be around 8.7 × 10-4 Ω·cm.Such films exhibit high transparency of over 80％ in the visible light region.These results indicate that tantalum-doped anatase TiO2 films have a great potential as transparent conducting oxides.Transparent conducting oxides (TCOs) have received much attention both in fundamental research and device applications due to their good combination of high electrical conductivity and excellent optical transparency.[1] Among various TCOs,indium tin oxide (ITO) is considered as the most beneficial TCO due to its excellent properties:low resistivity (～10-4 Ω·cm),high optical transmittance (80-90％)and simple preparation process.[2] However,due to the scarcity and high cost of indium,ITO may not be able to satisfy the demands in the future.Hence,it is necessary to explore new candidates of TCOs for expanding application usage.