首页> 外文期刊>中国物理快报:英文版 >Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells
【24h】

Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

机译:反应堆磁控溅射Cu2SixSn1-xS3薄膜用于低成本薄膜太阳能电池

获取原文
获取原文并翻译 | 示例
       

摘要

We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique.Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice,leading to a shrinkage of the lattice,and,accordingly,by 2θ shifting to larger values.The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3.Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm.Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.Solar cells based on Cu(In,Ga)Se2 (CIGS) absorbers have achieved conversion efficiencies as high as 20.3%,holding the record for thin film photovoltaics.[1] However,using the rare and expensive elements In and Ga limits the scalability to GWp/yr power production levels.Fortunately,Cu2SixSn1-xS3 (CSTS) is one of the potential earthabundant alternatives to Cu(In,Ga)Se2,and can replace In and Ga with inexpensive and benign elements due to its similar electronic and crystal structure.[2- 5]%We report the preparation of Cu2SixSn1-xS3 thin 61ms for thin 61m solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the CuzSnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 20 shifting to larger values. The blue shift of the Raman peak further con6rms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope anaiyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01eV.
机译:我们报道了使用反应磁控共溅射技术制备用于薄膜太阳能电池吸收体的Cu2SixSn1-xS3薄膜。能量色散谱仪和X射线衍射分析表明,可以通过部分取代Si原子来成功合成Cu2Si1-xSnxS3薄膜。 Cu2SnS3晶格中的Sn原子发生收缩,导致晶格收缩,并相应地通过2θ位移到更大的值。拉曼峰的蓝移进一步证实了Cu2SixSn1-xS3的形成。环境扫描电子显微镜分析显示晶粒大小约为200-300 nm的多晶和均质形态。光学测量表明其光吸收系数高于104 cm-1,带隙为1.17±0.01 eV。基于Cu(In,Ga)Se2的太阳能电池(CIGS)吸收剂的转换效率高达20.3%,保持了薄膜光伏的记录。[1]然而,使用稀有和昂贵的元素In和Ga限制了可扩展性至GWp / yr发电量水平。幸运的是,Cu2SixSn1-xS3(CSTS)是Cu(In,Ga)Se2潜在的潜在替代品之一,可以替代In [2- 5]%我们报道了使用反应磁控共溅射技术为薄61m太阳能电池吸收体制备Cu2SixSn1-xS3薄61ms的方法。能量色散光谱仪和X射线衍射分析表明,通过用Si原子部分取代CuzSnS3晶格中的Sn原子,可以成功地合成Cu2Si1-xSnxS3薄膜,从而导致晶格收缩,因此,可以将20倍位移到更大价值观。拉曼峰的蓝移进一步证实了Cu2SixSn1-xS3的形成。环境扫描电子显微镜分析显示出晶粒尺寸为约200-300nm的多晶且均匀的形态。光学测量表明光吸收系数高于104 cm-1,光带隙为1.17±0.01eV。

著录项

  • 来源
    《中国物理快报:英文版》 |2011年第10期|274-276|共3页
  • 作者单位

    Departments of Metallurgical Science and Engineering, Central South University, Changsha 410083;

    Departments of Metallurgical Science and Engineering, Central South University, Changsha 410083;

    Departments of Metallurgical Science and Engineering, Central South University, Changsha 410083;

    Departments of Metallurgical Science and Engineering, Central South University, Changsha 410083;

    Departments of Metallurgical Science and Engineering, Central South University, Changsha 410083;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号