Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films

摘要

The large coercive field of domain switching in poly(vinylidene fluoride-trittuoroethylene) thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer. We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization. Unexpectedly, the non-ferroelectric capacitance reduces by more than 71% with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization, which suggests the thickening of the above capacitive layers with enhanced domain switching speed.%The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene) thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71％ with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.It is well known that poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] copolymer thin films have attracted a great deal of attention in organic flexible electronics,such as non-volatile memories,detectors and display elements.[1-3]