首页> 中文期刊> 《中国物理快报:英文版》 >Reduction of the Far-Field Divergence Angle of an 850 nm Multi-Leaf Holey Vertical Cavity Surface Emitting Laser

Reduction of the Far-Field Divergence Angle of an 850 nm Multi-Leaf Holey Vertical Cavity Surface Emitting Laser

         

摘要

@@ By introducing multi-leaf sectorial holes into an oxidation confined 850nm vertical cavity surface emitting laser (VCSEL), the far-field divergence angle is reduced.The finite-difference time-domain method is used to simulate the far-field pattern of the multi-leaf holey VCSEL with different etching depths and different shapes of the oxide aperture in diameter R.Based on the simulation result, we design and fabricate a multi-leaf holey VCSEL and its divergence angle is only 60.The experimental results agree well with the theoretical predication.

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  • 来源
    《中国物理快报:英文版》 |2011年第8期|130-132|共3页
  • 作者单位

    Key Laboratory of Opto-electronics Technology(Ministry of Education), Beijing University of Technology,Beijing 100124;

    Key Laboratory of Opto-electronics Technology(Ministry of Education), Beijing University of Technology,Beijing 100124;

    Key Laboratory of Opto-electronics Technology(Ministry of Education), Beijing University of Technology,Beijing 100124;

    Key Laboratory of Opto-electronics Technology(Ministry of Education), Beijing University of Technology,Beijing 100124;

    Key Laboratory of Opto-electronics Technology(Ministry of Education), Beijing University of Technology,Beijing 100124;

    Key Laboratory of Opto-electronics Technology(Ministry of Education), Beijing University of Technology,Beijing 100124;

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