首页> 中文期刊> 《中国物理快报:英文版》 >Enhanced Light Extraction in AlInGaN UV Light-Emitting Diodes by an Embedded AlN/AlGaN Distributed Bragg Reflector

Enhanced Light Extraction in AlInGaN UV Light-Emitting Diodes by an Embedded AlN/AlGaN Distributed Bragg Reflector

         

摘要

@@

著录项

  • 来源
    《中国物理快报:英文版》 |2012年第10期|244-247|共4页
  • 作者单位

    Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074;

    College of Electronics and Information Engineering, South-Central University for Nationalities, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号