首页> 中文期刊> 《中国物理快报:英文版》 >Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser

Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser

         

摘要

A 1.56 μm passively mode-locked laser diode with a two-section tensile strained multi-quantum-well structure is fabricated.Without any external pulse compression,a Lorentz pulse train with a pulse width of 1.03 ps and a repetition rate of 35.6 GHz is obtained,which is one of the best results that have been reported on similar devices.The optical pulse has a 300 kHz line width and a 50dB peak over the noise floor in the photodetected radio-frequency electrical spectrum.%A 1.56μm passively mode-locked laser diode with a two-section tensile strained multi-quantum-well structure is fabricated. Without any external pulse compression, a Lorentz pulse train with a pulse width of 1.03ps and a repetition rate of 35.6 GHz is obtained, which is one of the best results that have been reported on similar devices. The optical pulse has a 300 kHz line width and a 50 dB peak over the noise floor in the photodetected radio-frequency electrical spectrum.

著录项

  • 来源
    《中国物理快报:英文版》 |2012年第2期|83-85|共3页
  • 作者单位

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

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