Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (11(2)2) GaN

摘要

Nonpolar (11-20) and semipolar (11222) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (11-22) and nonpolar a-plane GaN template is 3×105cm-1 and 8×10 cm'1, respectively. The semipolar (11-22) GaN shows an arrowhead-like structure, and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis. Both nonpolar (11-20) and semipolar (11-22) GaN have very strong BSF luminescence due to the optically active character of the BSFs.%Nonpolar (11(2)0) and semipolar (11(2)2) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the density of BSFs for the semipolar (11(2)2) and nonpolar a-plane GaN template is 3x105 cm-1 and 8×105 cm-1,respectively.The semipolar (11(2)2) GaN shows an arrowhead-like structure,and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis.Both nonpolar (11(2)0) and semipolar (11(2)2) GaN have very strong BSF luminescence due to the optically active character of the BSFs.