The Microwave Characteristics of an In0.4Ga0.6As Metal-Oxide-Semiconductor Field-Effect Transistor with an In0.49Ga0.51P Interfacial Layer

著录项

• 来源
  《中国物理快报：英文版 》 |2013年第8期|160-163|共4页
• 作者

  LIU Gui-Ming; CHANG Hu-Dong; SUN Bing; LIU Hong-Gang;

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• 作者单位

  Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

  Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

  Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

  Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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