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The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

         

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  • 来源
    《中国物理快报:英文版》 |2013年第6期|220-223|共4页
  • 作者单位

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083;

    Xi'an Jiaotong University, Xi'an 710049;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

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  • 正文语种 eng
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