Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode with an AlGaInAs/InP Distributed Bragg Reflector

著录项

• 来源
  《中国物理快报：英文版》 |2013年第3期|186-189|共4页
• 作者

  YUE Ai-Wen; WANG Ren-Fan; XIONG Bing; SHI Jing;

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• 作者单位

  Wuhan Telecommunication Devices Co.LTD, Wuhan 430074;

  Wuhan Telecommunication Devices Co.LTD, Wuhan 430074;

  Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084;

  Key Lab of Acoustic and Photonic Material and Device of Ministry of Education, Wuhan University, Wuhan 430072;

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• 原文格式 PDF
• 正文语种 eng
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