Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

著录项

• 来源
  《中国物理快报：英文版》 |2014年第9期|141-143|共3页
• 作者

  MA Li-Juan; JI Xiao-Li; CHEN Yuan-Cong; XIA Hao-Guang; ZHU Chen-Xin; GUO Qiang; YAN Feng;

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• 作者单位

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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