Room-Temperature Operation of 2.4μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

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• 来源
  《中国物理快报：英文版》 |2014年第5期|69-71|共3页
• 作者

  XING Jun-Liang; ZHANG Yu; LIAO Yong-Ping; WANG Juan; XIANG Wei; XU Ying-Qiang; WANG Guo-Wei;

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• 作者单位

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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