首页> 中文期刊> 《中国物理快报:英文版》 >Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

         

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  • 来源
    《中国物理快报:英文版》 |2015年第8期|204-207|共4页
  • 作者单位

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Northwest Institution of Nuclear Technology, Xi'an 710024;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    School of Nuclear Science and Tecnology, Xi'an Jiao Tong University, Xi'an 710049;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

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  • 正文语种 eng
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