Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF6/CF4 Cyclic Etching for Ge Fin Fabrication

著录项

• 来源
  《中国物理快报：英文版》 |2015年第4期|69-72|共4页
• 作者

  MA Xue-Zhi; ZHANG Rui; SUN Jia-Bao; SHI Yi; ZHAO Yi;

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• 作者单位

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027;

  Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

  Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027;

  State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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