Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor

著录项

• 来源
  《中国物理快报：英文版》 |2015年第2期|27-30|共4页
• 作者

  YUAN Heng; ZHANG Ji-Xing; ZHANG Chen; ZHANG Ning; XU Li-Xia; DING Ming; Patrick J.Clarke;

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• 作者单位

  Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191;

  School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191;

  School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191;

  Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191;

  School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191;

  Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191;

  School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191;

  Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191;

  School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191;

  Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191;

  School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191;

  Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词