首页> 中文期刊> 《中国物理快报:英文版》 >Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

         

著录项

  • 来源
    《中国物理快报:英文版》 |2016年第3期|95-98|共4页
  • 作者单位

    Department of Physics, Guangxi Medical University, Nanning 530021;

    Department of Physics, Guangxi Medical University, Nanning 530021;

    Department of Physics, Guangxi Medical University, Nanning 530021;

    Department of Physics, Guangxi Medical University, Nanning 530021;

    School of Physics and Electronics, Yancheng Teachers University, Yancheng 224051;

  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号