首页> 中文期刊> 《中国物理快报:英文版》 >Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor

Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor

         

摘要

As one of the most important tumor-associated antigens of colorectal adenocarcinoma,the carcinoembryonic antigen (CEA) threatens human health seriously all over the globe.Fast electrical and highly sensitive detection of the CEA with AlGaN/GaN high electron mobility transistor is demonstrated experimentally.To achieve a low detection limit,the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody.The proposed aptasensor has successfully detected different concentrations (ranging from 50 picogram/milliliter (pg/ml) to 50nanogram/milliliter (ng/ml)) of CEA and achieved a detection limit as low as 50pg/ml at Vds =0.5 V.The drain-source current shows a clear increase of 11.5 μA under this bias.

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  • 来源
    《中国物理快报:英文版》 |2017年第9期|87-90|共4页
  • 作者单位

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049;

    Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

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  • 正文语种 eng
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