机译:以A1为N电极的基于InGaN的395 nm倒装芯片近紫外发光二极管的增强发光
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;