首页> 中文期刊> 《中国物理快报:英文版》 >Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode

Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode

         

摘要

A four-wavelength Bragg reflection waveguide edge emitting diode based on intracavity spontaneous parametric down-conversion and four-wave mixing (FWM) processes is made.The structure and its tuning characteristic are designed by the aid of FDTD mode solution.The laser structure is grown by molecular beam epitaxy and processed to laser diode through the semiconductor manufacturing technology.Fourier transform infrared spectroscopy is applied to record wavelength information.Pump around 1.071 μm,signal around 1.77μm,idler around 2.71μm and FWM signal around 1.35μm are observed at an injection current of 560mA.The influences of temperature,carrier density and pump wavelength on tuning characteristic are shown numerically and experimentally.

著录项

  • 来源
    《中国物理快报:英文版》 |2017年第7期|80-84|共5页
  • 作者单位

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 101408;

    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026;

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  • 正文语种 eng
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