机译:三角形结构缺陷对4H-SiC超厚外延层载流子寿命的影响
School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071;
State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102211;
School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071;
School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071;
State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102211;
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048;
State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102211;
State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102211;
State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102211;
School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071;