首页> 外文期刊>中国物理:英文版 >Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors
【24h】

Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors

机译:高增益Ga2O3肖特基光电探测器抑制持续光电导性

获取原文
获取原文并翻译 | 示例
       

著录项

  • 来源
    《中国物理:英文版》 |2021年第12期|574-581|共8页
  • 作者单位

    Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China;

    Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China;

    Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China;

    Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China;

    Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China;

    Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号