Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

著录项

• 来源
  《中国物理：英文版》 |2021年第11期|688-694|共7页
• 作者

  Jian-Kai Xu; Li-Juan Jiang; Qian Wang; Quan Wang; Hong-Ling Xiao; Chun Feng; Wei Li; Xiao-Liang Wang;

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• 作者单位

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  The State Key Laboratory of Crystal Materials Shandong University Jinan 250100 China;

  institute of Novel Semiconductors Shandong University Jinan 250100 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China;

  Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China;

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