Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

著录项

• 来源
  《中国物理：英文版》 |2021年第9期|550-557|共8页
• 作者

  Mingchen Hou; Gang Xie; Qing Guo; Kuang Sheng;

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• 作者单位

  College of Electrical Engineering Zhejiang University Hangzhou 310027 China;

  Hangzhou Innovation Center Zhejiang University Hangzhou 310027 China;

  College of Electrical Engineering Zhejiang University Hangzhou 310027 China;

  Hangzhou Innovation Center Zhejiang University Hangzhou 310027 China;

  College of Electrical Engineering Zhejiang University Hangzhou 310027 China;

  Ningbo Chipex Semiconductor Co. LTD. Ningbo 315000 China;

  College of Electrical Engineering Zhejiang University Hangzhou 310027 China;

  Hangzhou Innovation Center Zhejiang University Hangzhou 310027 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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