Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

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• 来源
  《中国物理：英文版》 |2021年第7期|544-550|共7页
• 作者

  Yi-Dong Yuan; Ye-Ling Peng; Hong-Tao Zhang; Zhen Fu; Chen Ren; Fang Liu; Long-Tao Zhang; Yang Zhao; Ling Lv; Yi-Qiang Zhao; Xue-Feng Zheng; Dong-Yan Zhao; Zhi-Mei Zhou; Yong Wan; Xiao-Hua Ma; Yan-Rong Cao; Yu-Bo Wang; Jin Shao; Yan-Ning Chen; Wen-Long He; Jian Du; Min Wang;

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• 作者单位

  School of Microelectronics Tianjin University Tianjin 300072 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  School of Electro-Mechanical Engineering Xidian University Xi'an 710071 China;

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  School of Electro-Mechanical Engineering Xidian University Xi'an 710071 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  School of Electro-Mechanical Engineering Xidian University Xi'an 710071 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China;

  School of Microelectronics Tianjin University Tianjin 300072 China;

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  Smart Shine Microelectronics Technology Co. Ltd Qingdao 100081 China;

  Smart Shine Microelectronics Technology Co. Ltd Qingdao 100081 China;

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China;

  School of Electro-Mechanical Engineering Xidian University Xi'an 710071 China;

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  School of Microelectronics Tianjin University Tianjin 300072 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  School of Electro-Mechanical Engineering Xidian University Xi'an 710071 China;

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd Beijing 100192 China;

  School of Electro-Mechanical Engineering Xidian University Xi'an 710071 China;

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• 正文语种 eng
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