首页> 外文期刊>中国物理:英文版 >A MOVPE method for improving InGaN growth quality by pre-introducing TMIn
【24h】

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

机译:通过预介绍Tmin改善IngaN生长质量的MOVPE方法

获取原文
获取原文并翻译 | 示例
           

著录项

  • 来源
    《中国物理:英文版》 |2021年第1期|627-631|共5页
  • 作者单位

    State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China;

    State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

    State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

    State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号