Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots

著录项

• 来源
  《中国物理：英文版》 |2021年第1期|590-594|共5页
• 作者

  Guangze Lu; Zunren Lv; Zhongkai Zhang; Xiaoguang Yang; Tao Yang;

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• 作者单位

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

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• 正文语种 eng
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