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Progress on 2D topological insulators and potential applications in electronic devices

机译:二维拓扑绝缘体及其在电子设备中的潜在应用进展

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  • 来源
    《中国物理:英文版》 |2020年第9期|38-47|共10页
  • 作者单位

    MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China;

    MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China;

    MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China;

    MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China;

    MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China;

    MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2024-01-06 16:32:25
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