• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>中国物理：英文版 >Resonant tunnelling of electrons in multi-step single-barrier heterostructures
【24h】

Resonant tunnelling of electrons in multi-step single-barrier heterostructures

机译：多步单势垒异质结构中电子的共振隧穿

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 著录项
  • 相关主题
机译：We have studied the quantum transport of electrons in a three-step single-barrier A1GaAs heterostructure under electric field. Using the quantum transmitting boundary method and Tsu-Esaki approach, we have calculated the transmission coefficient and current-voltage characteristic. The difference of the effective mass among the three barriers is taken into account. Effects of the barrier width on transmission coefficient and peak-to-valley current ratios are examined. The largest peak-to-valley current ratio is obtained when the ratio of widths of the left, middle, and right barrier is fixed at 4:2:1. The calculated results may be helpful for designing devices based on three-step barrier heterostructures.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号